Nexperia PBSS4130PAN,115

Nexperia · Transistors (BJTs) · MPN PBSS4130PAN,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)165MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO7V
DC Current Gain210
Pd - Power Dissipation510mW
Number2 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor NPN 30V 1A 165MHz 510mW Surface Mount DFN2020-6

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