Nexperia PBSS4120T,215

Nexperia · Transistors (BJTs) · MPN PBSS4120T,215

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO5V
DC Current Gain300
Pd - Power Dissipation480mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

Bipolar (BJT) Transistor NPN 20V 1A 100MHz 480mW Surface Mount SOT-23

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