Nexperia PBSS4112PANP,115

Nexperia · Transistors (BJTs) · MPN PBSS4112PANP,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)120MHz;100MHz
Collector - Emitter Voltage VCEO120V
Emitter-Base Voltage VEBO7V
DC Current Gain60
Pd - Power Dissipation510mW
Number1 NPN + 1 PNP
typeNPN+PNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))170mV

Technical details

Bipolar (BJT) Transistor NPN+PNP 120V 1A 120MHz;;;100MHz 510mW Surface Mount DFN2020-6

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