Nexperia PBSS4112PAN,115

Nexperia · Transistors (BJTs) · MPN PBSS4112PAN,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO120V
Emitter-Base Voltage VEBO7V
DC Current Gain375
Pd - Power Dissipation510mW
Number2 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))170mV

Technical details

Bipolar (BJT) Transistor NPN 120V 1A 120MHz 510mW Surface Mount DFN2020-6

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