Nexperia PBSS306PX,115

Nexperia · Transistors (BJTs) · MPN PBSS306PX,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation2.1W
Number1 PNP
typePNP
Current - Collector(Ic)3.7A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))210mV

Technical details

Bipolar (BJT) Transistor PNP 100V 3.7A 100MHz 2.1W Surface Mount SOT-89

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