Nexperia PBSS306NZ,135

Nexperia · Transistors (BJTs) · MPN PBSS306NZ,135

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)110MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation1.7W
Number1 NPN
typeNPN
Current - Collector(Ic)5.1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))27mV

Technical details

Bipolar (BJT) Transistor NPN 100V 5.1A 110MHz 1.7W Surface Mount SOT-223

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