Nexperia PBSS305NX,115

Nexperia · Transistors (BJTs) · MPN PBSS305NX,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)110MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain90
Pd - Power Dissipation2.1W
Number1 NPN
typeNPN
Current - Collector(Ic)4.6A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))150mV

Technical details

Bipolar (BJT) Transistor NPN 80V 4.6A 110MHz 2.1W Surface Mount SOT-89

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