Nexperia PBSS302ND,115

Nexperia · Transistors (BJTs) · MPN PBSS302ND,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain250
Pd - Power Dissipation1.1W
typeNPN
Current - Collector(Ic)4A
Operating Temperature-
Vce Saturation(VCE(sat))330mV

Technical details

40V 250 NPN 4A SOT-457 Single Bipolar Transistors RoHS

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