Nexperia PBSS301ND,115

Nexperia · Transistors (BJTs) · MPN PBSS301ND,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO5V
DC Current Gain310
Pd - Power Dissipation1.1W
Number1 NPN
typeNPN
Current - Collector(Ic)4A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 20V 4A 100MHz 1.1W Surface Mount SOT-457

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