Nexperia PBSS2515YPN,115

Nexperia · Transistors (BJTs) · MPN PBSS2515YPN,115

No reviews yet — be the first to review Nexperia PBSS2515YPN,115.

Specifications

Current - Collector Cutoff100nA
DC Current Gain90
Pd - Power Dissipation300mW
Collector - Emitter Voltage VCEO15V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)420MHz
Vce Saturation(VCE(sat))250mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)500mA
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 15V 500mA 420MHz 300mW TSSOP-6(SOT-363)

Related Transistors (BJTs)