Nexperia · Transistors (BJTs) · MPN PBRP123ET,215
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| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 40V |
| Emitter-Base Voltage VEBO | 10V |
| DC Current Gain | 180 |
| Vce Saturation(VCE(sat)) | 750mV |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 600mA |
| Input Resistor | 2.2kΩ |
| type | PNP |
| Resistor Ratio | 1.1 |
| Number | 1 PNP Pre-Biased |
| Pd - Power Dissipation | 250mW |
40V 180 600mA PNP 1 PNP Pre-Biased 250mW SOT-23 Single, Pre-Biased Bipolar Transistors RoHS