Nexperia PBRP113ZT,215

Nexperia · Transistors (BJTs) · MPN PBRP113ZT,215

No reviews yet — be the first to review Nexperia PBRP113ZT,215.

Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO5V
DC Current Gain190
Vce Saturation(VCE(sat))45mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)600mA
Input Resistor1.3kΩ
Resistor Ratio11
Pd - Power Dissipation250mW
Voltage - Input(Max)(VI(off))1V
Input Voltage (VI(on)@Ic,Vce)1.4V

Technical details

Pre-Biased Bipolar Transistor (BJT) 40V 600mA 250mW Surface Mount SOT-23

Related Transistors (BJTs)