Nexperia · Transistors (BJTs) · MPN PBRN123YT,215
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| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 40V |
| Emitter-Base Voltage VEBO | - |
| DC Current Gain | 500 |
| Vce Saturation(VCE(sat)) | 1.15V |
| Operating Temperature | -65℃~+150℃ |
| Current - Collector(Ic) | 600mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 2.2kΩ |
| Resistor Ratio | 4.55 |
| Pd - Power Dissipation | 250mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V |
Pre-Biased Bipolar Transistor (BJT) 40V 700mA 370mW Surface Mount SOT-23