Nexperia PBRN123ET,215

Nexperia · Transistors (BJTs) · MPN PBRN123ET,215

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Specifications

Collector - Emitter Voltage VCEO40V
DC Current Gain280
Vce Saturation(VCE(sat))1.15V
Operating Temperature-65℃~+150℃
Current - Collector(Ic)600mA
Input Resistor2.2kΩ
typeNPN
Resistor Ratio1
Number1 NPN (Pre-Biased)
Pd - Power Dissipation250mW
Input Voltage (VI(on)@Ic,Vce)1V
Voltage - Input(Max)(VI(off))1.8V

Technical details

40V 280 600mA NPN 1 NPN (Pre-Biased) 250mW SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

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