Nexperia · Transistors (BJTs) · MPN PBRN123ET,215
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| Collector - Emitter Voltage VCEO | 40V |
|---|---|
| DC Current Gain | 280 |
| Vce Saturation(VCE(sat)) | 1.15V |
| Operating Temperature | -65℃~+150℃ |
| Current - Collector(Ic) | 600mA |
| Input Resistor | 2.2kΩ |
| type | NPN |
| Resistor Ratio | 1 |
| Number | 1 NPN (Pre-Biased) |
| Pd - Power Dissipation | 250mW |
| Input Voltage (VI(on)@Ic,Vce) | 1V |
| Voltage - Input(Max)(VI(off)) | 1.8V |
40V 280 600mA NPN 1 NPN (Pre-Biased) 250mW SOT-23 Single, Pre-Biased Bipolar Transistors RoHS