Nexperia · Transistors (BJTs) · MPN PBRN113ET,215
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| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 40V |
| Emitter-Base Voltage VEBO | 10V |
| DC Current Gain | 180 |
| Vce Saturation(VCE(sat)) | 1.15V |
| Operating Temperature | -65℃~+150℃ |
| Current - Collector(Ic) | 600mA |
| Input Resistor | 1kΩ |
| Resistor Ratio | 1.1 |
| Pd - Power Dissipation | 250mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.8V |
| Voltage - Input(Max)(VI(off)) | 1.5V |
40V 180 600mA 250mW NPN 1 NPN (Pre-Biased) SOT-23 Single, Pre-Biased Bipolar Transistors RoHS