Nexperia PBLS6024D,115

Nexperia · Transistors (BJTs) · MPN PBLS6024D,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Emitter-Base Voltage VEBO5V
DC Current Gain60
Vce Saturation(VCE(sat))260mV
Input Resistor28.6kΩ
Resistor Ratio1.2
Pd - Power Dissipation760mW
Voltage - Input(Max)(VI(off))800mV
Input Voltage (VI(on)@Ic,Vce)2.5V
Current - Collector(Ic)1.5A
Collector - Emitter Voltage VCEO60V

Technical details

Pre-Biased Bipolar Transistor (BJT) 60V 1.5A 760mW Surface Mount SOT-457

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