Nexperia PBLS6023D,115

Nexperia · Transistors (BJTs) · MPN PBLS6023D,115

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Specifications

Emitter-Base Voltage VEBO5V
DC Current Gain30
typeNPN+PNP
Input Resistor13kΩ
Resistor Ratio1.2
Number1 NPN Pre-Biased, 1 PNP
Pd - Power Dissipation760mW
Voltage - Input(Max)(VI(off))800mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)1.8V@10mA,0.3V
Current - Collector(Ic)1.5A
Collector - Emitter Voltage VCEO60V
Operating Temperature-55℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 60V 1.5A 760mW Surface Mount SOT-457

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