Nexperia · Transistors (BJTs) · MPN PBLS6002D,115
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| Transition frequency(fT) | 185MHz |
|---|---|
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 30 |
| type | NPN+PNP |
| Input Resistor | 4.7kΩ |
| Resistor Ratio | 1 |
| Number | 1 NPN Pre-Biased, 1 PNP |
| Pd - Power Dissipation | 600mW |
| Voltage - Input(Max)(VI(off)) | 500mV |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V |
| Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 60V |
30 1 NPN Pre-Biased, 1 PNP 600mW 1A 60V SOT-457 Bipolar Transistor Arrays, Pre-Biased RoHS