Nexperia · Transistors (BJTs) · MPN PBLS6001D,115
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| DC Current Gain | 30 |
|---|---|
| Resistor Ratio | 1 |
| Number | - |
| Pd - Power Dissipation | 600mW |
| Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -65℃~+150℃ |
30 600mW 1A 50V SOT-457 Bipolar Transistor Arrays, Pre-Biased RoHS