Nexperia PBLS4003Y,115

Nexperia · Transistors (BJTs) · MPN PBLS4003Y,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)300MHz
Emitter-Base Voltage VEBO6V
DC Current Gain30
Vce Saturation(VCE(sat))350mV
Input Resistor13kΩ
Resistor Ratio1
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))800mV
Input Voltage (VI(on)@Ic,Vce)2.5V
Current - Collector(Ic)500mA
Collector - Emitter Voltage VCEO50V

Technical details

30 300mW 500mA 50V 1 NPN Pre-Biased, 1 PNP SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS

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