Nexperia PBHV8115Z-QX

Nexperia · Transistors (BJTs) · MPN PBHV8115Z-QX

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Specifications

Current - Collector Cutoff100nA;10uA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO150V
DC Current Gain250
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation700mW;1.4W
ConfigurationStandalone
typeNPN
Number1 NPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))40mV;33mV;225mV

Technical details

150V 250 NPN 1 NPN 1A SOT-223 Single Bipolar Transistors RoHS

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