Nexperia PBHV8115T,215

Nexperia · Transistors (BJTs) · MPN PBHV8115T,215

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))350mV

Technical details

Bipolar (BJT) Transistor NPN 150V 1A 30MHz 300mW Surface Mount SOT-23

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