Nexperia NXP3875YR

Nexperia · Transistors (BJTs) · MPN NXP3875YR

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain120
Pd - Power Dissipation200mW
typeNPN
Current - Collector(Ic)150mA
Operating Temperature-
Vce Saturation(VCE(sat))250mV

Technical details

50V 120 NPN 150mA TO-236AB Single Bipolar Transistors RoHS

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