Nexperia NHUMH10F

Nexperia · Transistors (BJTs) · MPN NHUMH10F

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Specifications

DC Current Gain100
Resistor Ratio21
Number1 NPN, 1 PNP Pre-Biased
Pd - Power Dissipation350mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO80V
Operating Temperature-55℃~+150℃

Technical details

100 1 NPN, 1 PNP Pre-Biased 350mW 100mA 80V TSSOP-6 Bipolar Transistor Arrays, Pre-Biased RoHS

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