Nexperia NHUMD3F

Nexperia · Transistors (BJTs) · MPN NHUMD3F

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)-
Emitter-Base Voltage VEBO-
DC Current Gain50
Vce Saturation(VCE(sat))-
Output Voltage(VO(on))-
Input Resistor10kΩ
Resistor Ratio1
Pd - Power Dissipation350mW
Voltage - Input(Max)(VI(off))-
Input Voltage (VI(on)@Ic,Vce)-
Current - Collector(Ic)100mA

Technical details

50 350mW 100mA 80V 1 NPN, 1 PNP Pre-Biased TSSOP-6 Bipolar Transistor Arrays, Pre-Biased RoHS

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