Nexperia · Transistors (BJTs) · MPN NHUMD10F
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 170MHz |
| Emitter-Base Voltage VEBO | 7V |
| DC Current Gain | 100 |
| Vce Saturation(VCE(sat)) | 100mV@10mA,0.5mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 2.86kΩ |
| Resistor Ratio | 21 |
| Pd - Power Dissipation | 350mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.2V@10mA,0.3V |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V |
| Current - Collector(Ic) | 100mA |
100 350mW 100mA 80V 1 NPN, 1 PNP Pre-Biased TSSOP-6 Bipolar Transistor Arrays, Pre-Biased RoHS