Nexperia NHUMB11X

Nexperia · Transistors (BJTs) · MPN NHUMB11X

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Specifications

DC Current Gain50
Resistor Ratio1
Number2 PNP Pre-Biased Transistors
Pd - Power Dissipation350mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO80V
Operating Temperature-55℃~+150℃

Technical details

50 2 PNP Pre-Biased Transistors 350mW 100mA 80V TSSOP-6 Bipolar Transistor Arrays, Pre-Biased RoHS

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