Nexperia · Transistors (BJTs) · MPN NHDTC123JTVL
No reviews yet — be the first to review Nexperia NHDTC123JTVL.
| Transition frequency(fT) | 170MHz |
|---|---|
| Collector - Emitter Voltage VCEO | 80V |
| DC Current Gain | 100 |
| Vce Saturation(VCE(sat)) | 100mV |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Input Resistor | 2.2kΩ |
| type | NPN |
| Resistor Ratio | 21 |
| Number | 1 NPN (Pre-Biased) |
| Pd - Power Dissipation | 250mW |
| Voltage - Input(Max)(VI(off)) | 595mV |
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 80V 100mA 350mW Surface Mount TO-236AB