Nexperia · Transistors (BJTs) · MPN NHDTC123JTR
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| Collector - Emitter Voltage VCEO | 80V |
|---|---|
| Emitter-Base Voltage VEBO | 7V |
| DC Current Gain | 100 |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Resistor Ratio | 21 |
| Number | 1 NPN (Pre-Biased) |
| Pd - Power Dissipation | 350mW |
| Voltage - Input(Max)(VI(off)) | 500mV |
| Input Voltage (VI(on)@Ic,Vce) | 1.2V |
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 80V 100mA 350mW Surface Mount TO-236AB