Nexperia · Transistors (BJTs) · MPN NHDTA114YTR
No reviews yet — be the first to review Nexperia NHDTA114YTR.
| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 150MHz |
| Collector - Emitter Voltage VCEO | 80V |
| Emitter-Base Voltage VEBO | 7V |
| DC Current Gain | 100 |
| Vce Saturation(VCE(sat)) | 100mV@10mA,0.5mA |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 13kΩ |
| Resistor Ratio | 4.7 |
| Pd - Power Dissipation | 250mW |
80V 100 100mA 250mW PNP 1 PNP Pre-Biased TO-236AB Single, Pre-Biased Bipolar Transistors RoHS