Nexperia NHDTA114EUX

Nexperia · Transistors (BJTs) · MPN NHDTA114EUX

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO10V
DC Current Gain50
Vce Saturation(VCE(sat))100mV@10mA,0.5mA
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor10kΩ
Resistor Ratio1
Pd - Power Dissipation235mW

Technical details

80V 50 100mA 235mW PNP 1 PNP Pre-Biased SOT-323 Single, Pre-Biased Bipolar Transistors RoHS

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