Nexperia MJD45H11J

Nexperia · Transistors (BJTs) · MPN MJD45H11J

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO6V
DC Current Gain60
Pd - Power Dissipation1.75W
Number1 PNP
typePNP
Current - Collector(Ic)8A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor PNP 80V 8A 80MHz 1.75W Surface Mount DPAK

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