Nexperia MJD32CAJ

Nexperia · Transistors (BJTs) · MPN MJD32CAJ

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO6V
DC Current Gain25
Pd - Power Dissipation1.6W
typePNP
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1.2V

Technical details

100V 25 PNP 3A DPAK Single Bipolar Transistors RoHS

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