Nexperia MJD2873-QJ

Nexperia · Transistors (BJTs) · MPN MJD2873-QJ

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)65MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain40
Pd - Power Dissipation1.6W
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃

Technical details

50V 40 1 NPN NPN 2A DPAK Single Bipolar Transistors RoHS

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