Nexperia MJD148-QJ

Nexperia · Transistors (BJTs) · MPN MJD148-QJ

No reviews yet — be the first to review Nexperia MJD148-QJ.

Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
DC Current Gain30
Pd - Power Dissipation1.6W
Number1 NPN
typeNPN
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 45V 4A 3MHz 1.6W Surface Mount DPAK

Related Transistors (BJTs)