Nexperia BSV52,215

Nexperia · Transistors (BJTs) · MPN BSV52,215

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Specifications

Current - Collector Cutoff400nA
Transition frequency(fT)500MHz
Collector - Emitter Voltage VCEO12V
Emitter-Base Voltage VEBO5V
DC Current Gain40
Pd - Power Dissipation250mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN 12V 100mA 500MHz 250mW Surface Mount SOT-23

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