Nexperia BST52,115

Nexperia · Transistors (BJTs) · MPN BST52,115

No reviews yet — be the first to review Nexperia BST52,115.

Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain2000
Pd - Power Dissipation1.3W
typeNPN
Current - Collector(Ic)1A
Operating Temperature-
Vce Saturation(VCE(sat))1.3V

Technical details

80V 2000 NPN 1A SOT-89-3 Single Bipolar Transistors RoHS

Related Transistors (BJTs)