Nexperia BSP61,115

Nexperia · Transistors (BJTs) · MPN BSP61,115

No reviews yet — be the first to review Nexperia BSP61,115.

Specifications

Vbe Saturation(VBE(sat))1.9V
Current - Collector Cutoff50nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain2000
Pd - Power Dissipation1.25W
typePNP
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1.3V

Technical details

60V 2000 PNP 1A SOT-223-3 Single Bipolar Transistors RoHS

Related Transistors (BJTs)