Nexperia · Transistors (BJTs) · MPN BSP51,115
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| Vbe Saturation(VBE(sat)) | 1.9V |
|---|---|
| Current - Collector Cutoff | 50nA |
| Transition frequency(fT) | 200MHz |
| Collector - Emitter Voltage VCEO | 60V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 2000 |
| Pd - Power Dissipation | 1.25W |
| type | NPN |
| Current - Collector(Ic) | 1A |
| Operating Temperature | -65℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1.3V |
60V 2000 NPN 1A SOT-223-3 Single Bipolar Transistors RoHS