Nexperia BSP50,115

Nexperia · Transistors (BJTs) · MPN BSP50,115

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Specifications

Vbe Saturation(VBE(sat))1.9V
Current - Collector Cutoff50nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain-
Pd - Power Dissipation1.25W
typeNPN
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1.3V

Technical details

45V NPN 1A SOT-223 Single Bipolar Transistors RoHS

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