Nexperia BSP33,115

Nexperia · Transistors (BJTs) · MPN BSP33,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation1.3W
Number1 PNP
typePNP
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

80V 100 1 PNP PNP 1A SOT-223-3 Single Bipolar Transistors RoHS

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