Nexperia BF821-QVL

Nexperia · Transistors (BJTs) · MPN BF821-QVL

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Specifications

Current - Collector Cutoff10nA
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation250mW
typePNP
Number1 PNP
Current - Collector(Ic)50mA
Operating Temperature-65℃~+150℃

Technical details

300V PNP 1 PNP 50mA TO-236AB Single Bipolar Transistors RoHS

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