Nexperia BCW89-QR

Nexperia · Transistors (BJTs) · MPN BCW89-QR

No reviews yet — be the first to review Nexperia BCW89-QR.

Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation250mW
typePNP
Number1 PNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV
Operating Temperature-65℃~+150℃

Technical details

60V PNP 1 PNP 100mA TO-236AB Single Bipolar Transistors RoHS

Related Transistors (BJTs)