Nexperia BCW89,215

Nexperia · Transistors (BJTs) · MPN BCW89,215

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain120
Pd - Power Dissipation250mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))150mV

Technical details

Bipolar (BJT) Transistor PNP 60V 100mA 150MHz 250mW Surface Mount SOT-23

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