Nexperia BCW68GR

Nexperia · Transistors (BJTs) · MPN BCW68GR

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Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain160
Pd - Power Dissipation250mW
Number1 PNP
typePNP
Current - Collector(Ic)800mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))450mV

Technical details

Bipolar (BJT) Transistor PNP 45V 800mA 80MHz 250mW Surface Mount SOT-23

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