Nexperia BCW66GVL

Nexperia · Transistors (BJTs) · MPN BCW66GVL

No reviews yet — be the first to review Nexperia BCW66GVL.

Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain160
Pd - Power Dissipation250mW
Number1 NPN
typeNPN
Current - Collector(Ic)800mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))450mV

Technical details

45V 160 1 NPN NPN 800mA SOT-23 Single Bipolar Transistors RoHS

Related Transistors (BJTs)