Nexperia BCV65,215

Nexperia · Transistors (BJTs) · MPN BCV65,215

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Specifications

Current - Collector Cutoff15nA
DC Current Gain800
Pd - Power Dissipation250mW
Collector - Emitter Voltage VCEO30V
Transition frequency(fT)-
Vce Saturation(VCE(sat))300mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 30V 100mA 250mW Surface Mount SOT-143

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