Nexperia BCV46,215

Nexperia · Transistors (BJTs) · MPN BCV46,215

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Specifications

Current - Collector Cutoff100nA
Vbe On(VBE(on))1.4V
Transition frequency(fT)-
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO10V
DC Current Gain10000
Pd - Power Dissipation250mW
typePNP
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))1V
Operating Temperature-65℃~+150℃

Technical details

60V 10000 PNP 500mA TO-236AB Single Bipolar Transistors RoHS

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