Nexperia BCP56-10,115

Nexperia · Transistors (BJTs) · MPN BCP56-10,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain63
Pd - Power Dissipation1.35W
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 80V 1A 180MHz 1.35W Surface Mount SOT-223

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