Nexperia BCM857QASZ

Nexperia · Transistors (BJTs) · MPN BCM857QASZ

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Specifications

Current - Collector Cutoff15nA
DC Current Gain290
Pd - Power Dissipation350mW
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)175MHz
Vce Saturation(VCE(sat))400mV
typePNP
Number2 PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 45V 100mA 175MHz 350mW Surface Mount DFN-6(1x1)

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